MOSFET vs IGBT for Power Electronics: A Comprehensive Comparison

Power electronics play a central role in many areas of modern technology. Not only is it a key technology for powering countless devices in everyday life, such as motor drive systems and uninterruptible power supplies (UPS), but it is also a cornerstone for advancing renewable energy technologies, such as solar inverters. By efficiently converting and controlling electricity, power electronics enable us to design electronic systems that are more efficient, more reliable, and more environmentally friendly.

Metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs) are two of the most commonly used semiconductor devices in power electronics. They have a similar structure, but the main difference lies in the material of the substrate (drain): the substrate of the MOSFET is of the N+ type, while the substrate (drain, anode) of the IGBT is of the P+ type. Both devices are closed (non-conductive) at zero gate voltage and open (conductive) at positive gate voltage.

This paper aims to analyze and compare in depth the application of MOSFETs and IGBTs in the field of power electronics, highlighting their respective advantages and disadvantages. By comparing the performance of the two in terms of different parameters such as frequency, voltage, power, etc., we will explore the considerations for selecting MOSFETs or IGBTs for a particular application, including their impact on the overall efficiency, cost, and reliability of the system. We will also discuss their specific advantages in high frequency, low voltage, and high current applications, as well as other key factors to consider in the decision-making process, such as cooling requirements, product size, weight limitations, and switching speed.

Basic Principles and Characteristics of MOSFETs

Principle of operation of MOSFET

A metal oxide semiconductor field effect transistor (MOSFET) is a four-terminal semiconductor switching device used for switching and signal amplification in electronic circuits.
The four terminals of a MOSFET are the source (S), drain (D), gate (G), and body (or substrate). In some cases, the body end of the MOSFET is connected to the source to form a three-terminal device.
The MOSFET is controlled by applying a control signal between the gate and the source. When the gate voltage is positive, the MOSFET conducts (i.e., allows current to pass); when the gate voltage is zero, the MOSFET turns off (i.e., does not conduct).

Main types of MOSFETs and their electrical characteristics

Main types: N-channel enhancement MOSFET, P-channel enhancement MOSFET, N-channel depletion MOSFET, P-channel depletion MOSFET.
Electrical Characteristics:
ON-RESISTANCE: The specific on-resistance of a MOSFET increases linearly with increasing breakdown voltage, which limits the on-current (heat dissipation) at higher breakdown voltages.
Switching Speed: MOSFETs can operate at higher switching frequencies because the conduction in the drift region is done by majority carriers (electrons). This makes MOSFETs well-suited for applications that require fast switching.

Examples of MOSFET applications in power electronics

High-frequency applications: Due to their high-speed switching capability, MOSFETs are advantageous in high-frequency applications (frequencies > 200 kHz), e.g. in switching power supplies and DC/DC converters.
Low voltage applications: MOSFETs are suitable for low voltage (breakdown voltage < 250 V) applications due to their high efficiency and low conduction losses at low voltages.
Low Power Output: Since the conduction loss is proportional to the square of the drain current, MOSFETs are suitable for low power output (P < 500 W) applications such as small motor drives and portable electronic devices.
The above analysis shows the key characteristics of MOSFETs in power electronics and their advantages in specific applications. These characteristics make MOSFETs important in high frequency, low voltage, and low power applications.

Basic Principles and Characteristics of IGBTs

Principle of operation of IGBT

IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that integrates the characteristics of MOSFET and BJT (Bipolar Transistor).
It has three terminals: emitter, collector, and gate.
The IGBT controls conduction and cutoff between the Collector and Emitter through the Gate, using an insulated gate to control high currents.
When the gate is connected to a positive voltage, the IGBT conducts; when the gate voltage is zero or negative, the IGBT cuts off.

Main types of IGBTs and their electrical characteristics

Main types:
Punch-through IGBT (Punch-through IGBT): also known as asymmetric IGBT.
Non Punch-through IGBT: Also known as symmetrical IGBT.
Electrical Characteristics:
On-state voltage (Vf): IGBTs have a lower forward voltage in the on-state.
Switching speed: Compared to MOSFETs, IGBTs have a slower switching speed and are suitable for lower-frequency applications.
On-resistance: For a given breakdown voltage, the specific on-resistance of an IGBT decreases with increasing current and approaches zero at high currents.
Current and voltage tolerance: IGBTs are capable of handling high voltages and high power.

Application examples of IGBTs in power electronics

Industrial applications: e.g. AC motor drives, welding machines, power converters.
Household appliances: e.g. inverter air conditioners, electric vehicle charging stations.
Renewable energy systems: e.g. solar inverters, wind power generation.
Grid applications: e.g. grid control and power transmission.
IGBTs are widely used in power electronics due to their superior performance in high voltage and high power applications. Their main advantages are their low conduction losses and their suitability for high-current applications. However, due to relatively slow switching speeds, IGBTs are usually not suitable for high-frequency applications. When selecting a device, the specific requirements of the application need to be considered, including factors such as voltage, current, switching speed, and efficiency.

Comparative analysis of MOSFETs and IGBTs

  1. Comparison of voltage and current tolerance
    MOSFET: Typically suitable for low voltage (up to 600V) and low current applications. Their specific on-resistance grows linearly with increasing breakdown voltage, limiting on-current at high voltages.
    IGBTs: Suitable for high voltage (over 1000 V) and high current applications. the specific on-resistance of IGBTs decreases with increasing current (conductivity modulation), approaching zero at high currents, allowing the device width of IGBTs to be smaller than that of MOSFETs for the same breakdown voltage.
  2. Comparison of switching speed and efficiency
    MOSFET: Has a higher switching frequency (above 200 kHz), mainly because the conduction in the drift region is done by majority carriers (electrons). The high-frequency switching capability gives it an advantage in high-frequency low current applications.
    IGBT: Lower switching frequency (below 25 kHz), due to the presence of minority carriers in the drift region, resulting in longer switching time from on to off, limiting the operating frequency.
  3. Comparison of drive requirements and complexity
    MOSFET: Requires low drive current and relatively simple drive circuit. Suitable for fast switching applications and not prone to thermal runaway.
    IGBT: Has higher gate capacitance and may require more powerful gate drive circuitry. Tail current during switching results in additional switching losses.
  4. Cost-benefit analysis
    MOSFET: Typically has a lower overall system cost in low voltage applications due to higher efficiency and fast switching speeds.
    IGBT: While individual device costs may be higher, in high-voltage, high-power applications, they may be more economical in some applications due to lower conduction losses and higher overall efficiency.
  5. Comparison of suitability in different application scenarios
    MOSFET: Suitable for high-frequency and low-current applications such as adjustable switching power supplies (SMPS), DC/DC converters, and low-voltage motor controllers.
    IGBT: Commonly used in industrial applications, grid applications, and high-power AC applications, such as electric vehicles, solar inverters, and uninterruptible power supplies (UPS).
    To summarize
    The choice of MOSFET or IGBT depends on the needs of a particular application. When selecting a device, it is important to consider not only its losses in the transistor, but also the weight and cost of the cooling system, the size of the overall product, and reliability. Both devices are fundamental building blocks of modern power electronics and electronic circuits, but their individual characteristics and performance differences determine the application areas for which they are most suitable.

Technology Trends

New MOSFET and IGBT technologies under current research

New MOSFET technology:

Increased switching speed: By improving semiconductor materials and design, the switching speed of new MOSFETs in high-frequency applications has been significantly increased.
Reduced conduction loss: By optimizing the device structure, the on-resistance is reduced to further reduce the energy loss.
High-temperature stability: The new MOSFETs can operate stably at higher temperatures, increasing their application range in extreme environments.

New IGBT technology:

Reduced switching time: By improving the structural design of IGBTs, carrier accumulation during the switching process is reduced, thus shortening the turn-off time.
Improvement of voltage withstand capability: Development of IGBTs with higher voltage withstand ratings to adapt to higher voltage applications.
Enhancement of thermal management capability: new IGBTs improve reliability and stability in high-power applications through improved heat dissipation technology.
Future trends in power electronics and their impact on MOSFET and IGBT technology
Moving to higher frequencies and higher power densities: As the demand for miniaturization and high efficiency in electronic devices increases, MOSFETs and IGBTs need to adapt to higher frequencies and higher power densities.
Intelligence and modularity: The integration of more intelligent features, such as self-diagnostics and protection mechanisms, as well as modular designs, make MOSFETs and IGBTs easier to integrate and use. Wide bandwidth semiconductor materials: such as silicon carbide (SiC) and gallium nitride (GaN) and other wide bandwidth semiconductor materials, will make MOSFETs and IGBTs in high-temperature, high-frequency, high-efficiency performance significantly.
Sustainability and environmental protection requirements: with the improvement of environmental protection requirements, the manufacturing and use of MOSFETs and IGBTs will pay more attention to reducing environmental impact, such as reducing the use of hazardous substances and improving energy efficiency.
Combination with renewable energy: In solar inverters, wind power generation, and other renewable energy applications, MOSFETs and IGBTs will play a more important role, especially in improving energy conversion efficiency and system stability.

In summary, the technical development of MOSFETs and IGBTs will pay close attention to the changing needs of the power electronics industry, and continuously improve the performance and reliability of the devices to meet the growing demand for efficient, intelligent and environmentally friendly applications.


MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are both semiconductor switching devices commonly used in power electronics, but they have some significant differences in their characteristics and performance. Below is a summary of these differences, as well as their respective advantages.

Key Differences and Advantages of MOSFETs

High-Frequency Operation: MOSFETs can operate at higher switching frequencies, making them suitable for applications that require fast switching.
Low Voltage Applications: MOSFETs are better suited for low voltage (<250V) environments. Low Power Output: MOSFETs are more effective for low power applications less than 500W. Conduction Mode: In MOSFETs, the conduction in the drift region is done by the main carriers (electrons), which contributes to fast switching. Specific Open Impedance: The specific open impedance of a MOSFET increases approximately linearly with increasing breakdown voltage. Key Differences and Advantages of IGBTs Low-Frequency Operation: IGBTs are better suited for low frequency (<25kHz) applications. High Voltage Applications: IGBTs perform better in high voltage (>1000V) environments.
High Power Output: IGBTs are a better choice for high-power applications greater than 5kW.
Conductivity Modulation: The specific open impedance of IGBTs decreases with increasing current, which is an advantage for high current applications.
Long on-off switching time: IGBTs have a long on-off switching time, which limits their operating frequency.

Recommendations for Power Electronics Engineers

When selecting a MOSFET or IGBT, power electronics engineers should consider the following factors:

Voltage Rating: Select the appropriate device based on the voltage requirements of the application environment.
Power Loss: Consider the efficiency of the entire system and select a device that reduces energy loss.
System Cost: Consider the cost of the entire system, including heat dissipation, size, reliability and the cost of the device itself.
Application Characteristics: Consider application-specific requirements such as switching frequency, current magnitude, thermal management, and space constraints.
Technology Development: Follow the latest technology developments and market trends to select the most appropriate technology solution.

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